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Nanostructured ruthenium etching in three-component Cl2 /O2/Ar plasma
Amirov I.I., Izyumov M.O., Lopaev D.V., Rakhimova T.V., Kropotkin A.N., Voloshin D.G., Palov A.P.
Parameters and Composition of Plasma in a Mixture of CF4 + H2 + Ar: Effect of the CF4/H2 Ratio
Miakonkikh A.V., Kuzmenko V.O., Efremov A.M., Rudenko K.V.
Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy
Murin D.B., Chesnokov I.A., Pivovarenok S.A., Efremov A.M.
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